Low energy ion bombardment on c-Ge surfaces

Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies

Stress evolution in Si during low-energy ion bombardment

Measurements of stress evolution during low-energy argon ion bombardment of Si have been made using a real-time wafer curvature technique. During irradiation, the stress reaches a steady-state compressive value that depends on the flux and energy. Once irradiation is terminated, the measured stress relaxes slightly in a short period of time to a final value. To understand the ion-induced stress...

Growth mechanism of thin oxide films under low-energy oxygen-ion bombardment

Bombardment of silicon surfaces by low-energy oxygen ions has been investigated as a possible process for growing films ofSiOzat room temperature. Broad ion beams ofenergy 40-200 eV and variable oxygen content have been used to grow ultrathin oxides of extremely uniform thickness. The ion beam oxides are similar to thin thermal oxides in many respects-composition, chemical binding, optical, and...

Concentration micropro®les in iron silicides induced by low energy Ar ion bombardment

Auger electron spectroscopy (AES) in conjunction with sputter removal by Ar‡ ions of only 120 eV has been used to determine the concentration micropro®les generated in polycrystalline Fe3Si, FeSi and FeSi2 samples by a preceding bombardment with Ar‡ ions of 1±5 keV. The conversion of the surface sensitive AES ptp-signals measured in dependence of the pro®ling ion ̄uence into concentration-versu...

Stress evolution due to medium-energy ion bombardment of silicon

The evolution of stress in silicon, induced by argon ion bombardment up to fluences of 4.5 · 10 ions/cm, is studied using molecular dynamics simulations with empirical interatomic potentials. A periodically replicated 5.43 nm cube with an exposed (001) surface models the sample of silicon. An interatomic force balance method computes stresses directly across planes in the cube. After every impa...